SQJ941EP
www.vishay.com
THERMAL RATINGS (T A = 25 °C, unless otherwise noted)
2
1
D u ty Cycle = 0.5
0.2
Vishay Siliconix
0.1
0.1
0.02
0.05
Single P u lse
0.01
10- 5
10- 4
10- 3
10- 2
10- 1
1
Sq u are Wave P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
? The characteristics shown in the two graphs ?
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) ?
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C) ?
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65546 .
S12-1848-Rev. C, 30-Jul-12
6
Document Number: 65546
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SQJ964EP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SQJ970EP-T1-GE3 MOSFET DUAL N-CH 40V PPAK 8SOIC
SQM110N04-02L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N04-03L-GE3 MOSFET N-CH D-S 40V TO263
SQM110N06-04L-GE3 MOSFET N-CH D-S 60V TO263
SQM40N10-30-GE3 MOSFET N-CH D-S 100V TO263
SQM85N03-06P-GE3 MOSFET N-CH D-S 30V TO263
SQR50N03-06P-GE3 MOSFET N-CH D-S 30V TO263
相关代理商/技术参数
SQJ942EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs
SQJ942EP-T1-GE3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 40 V (D-S) 175 C MOSFETs
SQJ951EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual P-Channel 30 V (D-S) 175 ?°C MOSFET
SQJ960EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 60 V (D-S) 175 ?°C MOSFET
SQJ960EP-T1-GE3 功能描述:MOSFET 60V 8A 34W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ962EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual N-Channel 60 V (D-S) 175 ?°C MOSFET
SQJ962EP-T1-GE3 功能描述:MOSFET 60V 8A 25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQJ963EP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive Dual P-Channel 60 V (D-S) 175 ?°C MOSFET